Ugereranije na semiconductor ishingiye kuri silicon, amashanyarazi ya SiC (silicon carbide) afite ibyiza byingenzi muguhindura inshuro, gutakaza, gukwirakwiza ubushyuhe, miniaturizasi, nibindi.
Hamwe n’umusaruro munini wa silicon carbide inverters na Tesla, amasosiyete menshi nayo yatangiye kumanura ibicuruzwa bya karubide ya silicon.
SiC "iratangaje" cyane, yakozwe gute kwisi? Ni ubuhe buryo bukoreshwa? Reka turebe!
01 th Ivuka rya SiC
Kimwe nizindi mbaraga za semiconductor, urwego rwinganda rwa SiC-MOSFET rurimomaremare maremare - substrate - epitaxy - igishushanyo - gukora - guhuza ibicuruzwa.
Ikirahure kirekire
Mugihe kinini cyo guhuza kirisiti, bitandukanye no gutegura uburyo bwa Tira bukoreshwa na silikoni imwe ya kirisiti, karbide ya silicon ikoresha uburyo bwo gutwara gaze kumubiri (PVT, izwi kandi ko uburyo bwiza bwa Lly cyangwa imbuto ya kristal sublimation), uburyo bwo gushyiramo ubushyuhe bwa gaze ya chimique (HTCVD) ) inyongera.
Intambwe yibanze
1. Ibikoresho bya karubone bikomeye;
2. Nyuma yo gushyushya, karbide ikomeye iba gaze;
3. Gazi yimuka hejuru yimbuto ya kirisiti;
4. Gazi ikura hejuru yimbuto ya kirisiti ihinduka kristu.
Inkomoko y'amashusho: “Ingingo ya tekinike yo gusenya PVT ikura ya silicon karbide”
Ubukorikori butandukanye bwateje ingaruka ebyiri zikomeye ugereranije na silicon base:
Ubwa mbere, umusaruro uragoye kandi umusaruro ni muke.Ubushyuhe bwa gaze ya gaze ya karubone ikura hejuru ya 2300 ° C naho umuvuduko ni 350MPa. Agasanduku kijimye kose karakozwe, kandi biroroshye kuvanga umwanda. Umusaruro uri munsi ya silicon. Ninini ya diameter, niko umusaruro ugabanuka.
Iya kabiri ni gukura buhoro.Imiyoborere yuburyo bwa PVT iratinda cyane, umuvuduko ni 0.3-0.5mm / h, kandi irashobora gukura 2cm muminsi 7. Ntarengwa irashobora gukura 3-5cm gusa, kandi diameter ya kristal ingot ni santimetero 4 na santimetero 6.
Silicon ishingiye kuri 72H irashobora gukura kugera ku burebure bwa 2-3m, hamwe na diametre ahanini santimetero 6 nubushobozi bushya bwa santimetero 8 kuri santimetero 12.Kubwibyo, karibide ya silicon bakunze kwita kristu ingot, hanyuma silikoni ihinduka inkoni ya kirisiti.
Carbide silicon kristal ingots
Substrate
Nyuma ya kirisiti ndende irangiye, yinjira mubikorwa byo gukora substrate.
Nyuma yo gukata intego, gusya (gusya bikabije, gusya neza), gusya (gukanika imashini), gukonjesha ultra -precision polishing (chimique mashine polishing), haboneka insimburangingo ya silicon karbide.
Substrate ikina cyaneuruhare rwimfashanyo yumubiri, ubushyuhe bwumuriro nubushobozi.Ingorabahizi yo gutunganya nuko ibikoresho bya kariside ya silicon ari ndende, byoroshye, kandi bihamye mumiterere yimiti. Kubwibyo, uburyo bwa silicon bushingiye kuburyo bwo gutunganya ntibukwiranye na silicon karbide substrate.
Ubwiza bwingaruka zo guca bugira ingaruka kuburyo butaziguye kumikorere no gukoresha neza (ikiguzi) cyibicuruzwa bya kariside ya silicon, bityo rero birasabwa kuba bito, ubunini bumwe, no gukata hasi.
Kugeza ubu,4 -inch na 6 -inch ikoresha cyane ibikoresho byo gutema imirongo myinshi,gukata kristu ya silicon mo uduce duto hamwe nubunini butarenze 1mm.
Igishushanyo mbonera cyo gukata igishushanyo mbonera
Mu bihe biri imbere, hamwe no kwiyongera k'ubunini bwa karuboni ya silikoni ya waferi, kwiyongera kw'ibisabwa mu gukoresha ibikoresho biziyongera, kandi ikoranabuhanga nko gukata lazeri no gutandukanya imbeho naryo rizakoreshwa buhoro buhoro.
Muri 2018, Infineon yaguze Siltectra GmbH, yateje imbere uburyo bushya buzwi nko gukonja.
Ugereranije na gakondo gakondo yo guca inzira gutakaza 1/4,ubukonje bukonje bwatakaye gusa 1/8 cyibikoresho bya silicon.
Kwagura
Kubera ko karibide ya silicon idashobora gukora ibikoresho byamashanyarazi kuri substrate, ibikoresho bitandukanye birasabwa kurwego rwagutse.
Kubwibyo, nyuma yumusaruro wa substrate urangiye, firime yihariye ya kristu yoroheje ikura kuri substrate binyuze muburyo bwo kwagura.
Kugeza ubu, uburyo bwo kubika gaze ya chimique (CVD) bukoreshwa cyane.
Igishushanyo
Nyuma ya substrate ikozwe, yinjira murwego rwo gushushanya ibicuruzwa.
Kuri MOSFET, intumbero yuburyo bwo gushushanya nigishushanyo cya groove,kuruhande rumwe kugirango wirinde kuvutswa ipatanti(Infineon, Rohm, ST, nibindi, bifite imiterere ya patenti), kurundi ruhande kurikuzuza ibiciro byo gukora no gukora.
Ibihimbano bya Wafer
Igishushanyo mbonera kimaze kurangira, cyinjira murwego rwo gukora wafer,kandi inzira isa nkaho ya silicon, ifite intambwe 5 zikurikira.
☆ Intambwe ya 1: Injira mask
Hakozwe igice cya firime ya silicon oxyde (SiO2), ifotora irashushanyijeho, uburyo bwo gufotora bukorwa hifashishijwe intambwe yo guhuza ibitsina, kumenyekanisha, gutera imbere, nibindi, kandi igishushanyo cyimurirwa muri firime ya okiside binyuze muburyo bwo gutema.
☆ Intambwe ya 2: Gutera Ion
Wafer ya maskike ya silicon karbide ishyirwa mubitera ion, aho ion ya aluminiyumu yatewe kugirango habeho agace ka D-doping, hanyuma igashyirwa hamwe kugirango ikore ion ya aluminiyumu.
Filime ya oxyde ikurwaho, ion ya azote yatewe mukarere runaka k’akarere ka doping yo mu bwoko bwa P kugira ngo ikore agace ka N kayobora imiyoboro y’amazi n’isoko, kandi ion ya azote yatewe irashyirwa hamwe kugira ngo ikore.
☆ Intambwe ya 3: Kora gride
Kora gride. Mu gice kiri hagati yisoko n’amazi, urwego rwa oxyde ya irembo rutegurwa nuburyo bwo hejuru bwa okiside yubushyuhe bwo hejuru, kandi urwego rwa electrode yumuryango rushyirwa muburyo bwo kugenzura amarembo.
☆ Intambwe ya 4: Gukora passivation
Passivation layer yakozwe. Shira passivation igizwe nibintu byiza biranga insulasiyo kugirango wirinde gusenyuka kwa interelectrode.
☆ Intambwe ya 5: Kora imiyoboro ya electrode
Kora amazi n'inkomoko. Inzira ya passivation irasobekeranye kandi ibyuma bisukwa kugirango bibe imiyoboro nisoko.
Inkomoko y'ifoto: Umurwa mukuru wa Xinxi
Nubwo hari itandukaniro rito hagati yurwego rwibikorwa na silicon ishingiye, bitewe nibiranga ibikoresho bya karubide ya silicon,Gutera ion hamwe na annealing bigomba gukorwa mubushyuhe bwo hejuru(kugeza kuri 1600 ° C), ubushyuhe bwo hejuru buzagira ingaruka kumiterere yibikoresho ubwabyo, kandi ingorane nazo zizagira ingaruka kumusaruro.
Mubyongeyeho, kubice bya MOSFET,ubwiza bwa irembo ogisijeni igira ingaruka ku buryo butaziguye umuyoboro ugenda no kwizerwa kw'irembo, kubera ko hari ubwoko bubiri bwa silicon na karubone mubikoresho bya karibide ya silicon.
Kubwibyo, hasabwa uburyo bwihariye bwo gukura amarembo aringaniye (indi ngingo nuko urupapuro rwa karbide ya silicon rusobanutse, kandi guhuza imyanya kurwego rwa fotolithographie biragoye kuri silicon).
Nyuma yo gukora wafer irangiye, chip ya buri muntu yaciwe muri chip yambaye ubusa kandi irashobora gupakirwa ukurikije intego. Inzira isanzwe kubikoresho byihariye ni TO pack.
650V CoolSiC ™ MOSFETs muri TO-247
Ifoto: Infineon
Umwanya wimodoka ufite imbaraga nyinshi nubushyuhe bwo gukwirakwiza ubushyuhe, kandi rimwe na rimwe biba ngombwa kubaka mu buryo butaziguye imirongo yikiraro (igice cyikiraro cyangwa ikiraro cyuzuye, cyangwa gipakiye na diode).
Kubwibyo, akenshi iba ipakiwe muburyo butandukanye cyangwa sisitemu. Ukurikije umubare wa chipi zapakiwe muri module imwe, ifishi isanzwe ni 1 kuri 1 (BorgWarner), 6 kuri 1 (Infineon), nibindi, kandi ibigo bimwe bikoresha umugozi umwe ugereranije.
Borgwarner Viper
Shyigikira gukonjesha amazi abiri na SiC-MOSFET
Infineon CoolSiC ™ MOSFET modules
Bitandukanye na silicon,moderi ya silicon karbide ikora mubushyuhe bwo hejuru, hafi 200 ° C.
Ubusanzwe ibicuruzwa byoroheje bigurisha ubushyuhe bwo gushonga ubushyuhe buri hasi, ntibishobora kuzuza ibisabwa ubushyuhe. Kubwibyo, silicon karbide modules akenshi ikoresha ubushyuhe bwo hasi bwa silver sintering welding.
Module imaze kurangira, irashobora gukoreshwa mubice sisitemu.
Tesla Model3 umugenzuzi wa moteri
Chip yambaye ubusa iva muri ST, yikoreye pake hamwe na sisitemu yo gutwara amashanyarazi
☆ 02 Imiterere ya SiC?
Mu murima wimodoka, ibikoresho byamashanyarazi bikoreshwa cyane muriDCDC, OBC, imashini ihindura moteri, ibyuma bifata ibyuma bifata ibyuma bikonjesha, kwishyuza bidasubirwaho nibindi biceibyo bisaba AC / DC guhinduka byihuse (DCDC ikora cyane nka switch yihuta).
Ifoto: BorgWarner
Ugereranije nibikoresho bishingiye kuri silicon, ibikoresho bya SIC bifite byinshiimbaraga zikomeye za avalanche kumeneka imbaraga(3 × 106V / cm),amashanyarazi meza(49W / mK) naicyuho kinini(3.26eV).
Nukwagura icyuho cya bande, ntoya ntoya yamenetse kandi niko ikora neza. Nibyiza ubushyuhe bwumuriro, nubucucike buriho. Imbaraga zikomeye zo gusenyuka kwa avalanche ni, imbaraga zo guhangana nigikoresho gishobora kunozwa.
Kubwibyo, mubijyanye na voltage yumuriro mwinshi, MOSFETs na SBD byateguwe nibikoresho bya karubide ya silicon kugirango bisimbuze IGBT hamwe na FRD bihari bishobora guteza imbere imbaraga nubushobozi,cyane cyane murwego rwo hejuru rwo gusaba ibintu kugirango ugabanye igihombo.
Kugeza ubu, birashoboka cyane kugera ku ntera nini ya porogaramu muri moteri ihindura, ikurikirwa na OBC na DCDC.
800V Umuyoboro wa voltage
Muri 800V yumurongo wa voltage, ibyiza byumurongo mwinshi bituma ibigo byifuza guhitamo igisubizo cya SiC-MOSFET. Kubwibyo, ibyinshi muri 800V igenzura igenzura rya elegitoronike SiC-MOSFET.
Igenamigambi ryo murwego rurimokijyambere E-GMP, GM Otenergy - ikibuga cyo gukuramo, Porsche PPE, na Tesla EPA.Usibye Porsche PPE yerekana imiterere idatwara neza SiC-MOSFET (moderi yambere ni IGBT ishingiye kuri silika), izindi mbuga zimodoka zikoresha gahunda ya SiC-MOSFET.
Ihuriro rusange rya Ultra ingufu
800V gutegura icyitegererezo ni byinshi,ikirango kinini cya Salon ya Jiagirong, Beiqi pole Fox S HI, imodoka nziza S01 na W01, Xiaopeng G9, BMW NK1, Changan Avita E11 yavuze ko izatwara 800V platform, usibye BYD, Lantu, GAC 'an, Mercedes-Benz, zero Run, Ibendera ritukura rya FAW, Volkswagen yavuze kandi ko ikoranabuhanga rya 800V mu bushakashatsi.
Uhereye kubibazo bya 800V byateganijwe nabatanga Tier1,BorgWarner, Ikoranabuhanga rya Wipai, ZF, United Electronics, na Huichuanbose batangaje 800V yo gutwara amashanyarazi.
Umuyoboro wa voltage 400V
Muri 400V yumurongo wa voltage, SiC-MOSFET iri murwego rwo gusuzuma ingufu nyinshi nubucucike bwimbaraga hamwe nubushobozi buhanitse.
Nka moteri ya Tesla Model 3 \ Y imaze gukorwa cyane, ingufu za moteri ya BYD Hanhou ni 200Kw (Tesla 202Kw, 194Kw, 220Kw, BYD 180Kw), NIO izakoresha kandi ibicuruzwa bya SiC-MOSFET guhera kuri ET7 na ET5 izashyirwa ku rutonde nyuma. Imbaraga zo hejuru ni 240Kw (ET5 210Kw).
Byongeye kandi, duhereye ku buryo bunoze bwo gukora, ibigo bimwe na bimwe birimo gukora ubushakashatsi ku bishoboka ko umwuzure w’umwuzure w’ibicuruzwa bya SiC-MOSFET.
Igihe cyo kohereza: Nyakanga-08-2023
